• Mass Action Law
And independent of amount of doping by the donor and acceptor impurities.
=) Thermal equilibrium = stable temperature = temperature =constant
n.p = constant
T = constant
At constant temperature the concentration of minority charge carrier is inversly proportional to the doping concentration.
Note - mass action law is used to determine concentration of minority charge carrier
* Concentration/ density of charge carrier --
n.p = ni^2
Where n = concentration of electron
P = concentration of holes
ni = intrinsic concentration
ND = concentration of donar atom cm^3
NA = concentration of accepter atoms / cm^3
In a semiconductor,
electrically neutrality ,
Total +ve charge = total - ve cahrge
ND + p = NA + n
(a) For N- type semiconductor,
For n-type materials concentrations of electrons is almost equal to the donor concentration.
NA = 0
ND + p = 0 + n
ND = n - p ( n>>p)
ND ≈ n
According Mass action law,
n.p = ni^2
=) ND.p = ni^2
=) p = ni^2 / ND
(b) for p - type semiconductor,
For n - type materials concentration of electron is almost equal to the acceper concentration
ND =0
=) 0 + p = NA + n
=) NA = p - n. ( P >>n )
=) NA ≈ p
According Mass action law,
n.p = ni^2
=) n.NA = ni^2
=) n = ni^2/NA.
